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Samsung Unveils Next-Gen Memory for AI and Data Centers

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Samsung Unveils Next-Gen Memory for AI and Data Centers

Samsung Electronics Co. will release a new generation of memory chips for AI and Data Centers in late 2021, the company’s first in seven years, that promises to double speeds and provide the most capacity yet to keep up with the growth of data centers and AI artificial intelligence demands.

The world’s largest memory chipmaker announced the production of 512GB DDR5 (Double Data Rate 5) memory modules based on a fabrication method known as High-K Metal Gate (HKMG), which has historically been used in logic chips. According to the business, DDR5 memory would be twice as fast as current DDR4 memory while reducing leakage and using around 13% less power.

The move to DDR5 is scheduled to begin in the second half of this year, according to Samsung. The chip industry has been expecting the introduction of the latest memory standard, and Intel Corp.’s upcoming Xeon Scalable processors, codenamed Sapphire Rapids, will provide support for it. Samsung has sent samples of its new memory to data center platform developers, in addition to collaborating with the two major CPU suppliers, Intel and Advanced Micro Devices Inc.

According to analysts, DDR5 chips would be around 20% larger than DDR4 bits, putting more strain on semiconductor supply chains. Samsung expects to start shipping this year and progressively improve both its fabrication processes (including the use of extreme ultraviolet lithography) and pricing (which will include a premium in the early stages). The transition from DDR4 to DDR5 is expected to happen in the second half of 2023, according to the Suwon-based group.

“The shortage of DRAM is expected to continue in 2022 as the penetration rate of DDR5 steadily rises,” said Avril Wu, Vice President at TrendForce Research. “We also foresee a 30-40% price increase to occur at first.”

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